The present invention provides a method of forming a liquid crystal display (LCD).
Active layers of N-type and P-type low temperature polysilicon thin film transistors
and a bottom electrode of a storage capacitor are formed first. Then a N-type source/drain
is formed and the bottom electrode is doped with dopants. A gate insulator, a gate
electrode, a capacitor dielectric, and a top electrode are thereafter formed. After
that, a P-type source/drain is formed. Finally, a source interconnect, a drain
interconnect, and a pixel electrode of the liquid crystal display are formed.
