A semiconductor device and a method of manufacturing the semiconductor device
are
disclosed. A semiconductor device of one of several disclosed embodiments comprises
a semiconductor layer having a source region and a drain region, and a gate insulating
film provided on the semiconductor layer between the source region and the drain
region. The gate insulating film comprising an oxide including a metal element
and further includes at least one element selected from the group consisting of
nitrogen and aluminum as a first element. The content of the first element is relatively
higher at both ends near the source region and the drain region than at a center
of the gate insulating film. A gate electrode is provided on the gate insulating film.
