The invention is to realize such a semiconductor light-emitting element which
is higher in external quantum efficiency than an existing LED, and lower in production
cost than an existing semiconductor laser. The light transmission insulating film
is formed on a continuously incline face comprising the semiconductor layers having
an opening angle etched in right angled V. The V shape incline is formed by a known
technique, and both left and right inclined faces have the angle of 45. Depending
on the length of or the position of the light reflecting portion, probability
that the light in duration of resonance is reflected may be made optimum or preferable.
According to this structure, it is no longer necessary to carry out processing
treatments of high degree, high precision, or high cost such as, e.g., multi-layered
film coating in a resonance direction, and it is possible to structure the semiconductor
light-emitting element having a resonating mechanism as a resonator though not
forming end faces of high cost.
