Nitride semiconductor light-emitting device and optical apparatus including the same
   
   

A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN1-x-y-zAsxPySbz (0x0.15, 0y0.2, 0z0.05, x+y+z0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.

 
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