Semiconductor device having channel formation region comprising silicon and containing a group IV element page

Semiconductor device having channel formation region comprising silicon and containing a group IV element

A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.

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