A low supply voltage and self-biased high speed receiver comprising both thin
and
thick gate oxide MOSFETs in deep submicron technology. The receiver operates with
an IO supply voltage higher than its core MOSFET operating voltage. The input signals
are received by the thick gate oxide devices and the thin gate oxide devices are
free from gate oxide stress, which eliminates the reliability problem. The current
supplies formed by thin oxide devices provide a high supply current so that neither
additional higher voltage supply nor low Vt IO device is needed, and the circuit
area for the current supplies is reduced.
