Disclosed are an ion implantation method capable of dramatically increasing
an implantation rate of hydrogen ions into a semiconductor substrate and a method
for manufacturing an SOI wafer, in which manufacturing efficiency of the SOI wafer
is sufficiently high. When the hydrogen ions are implanted to a predetermined depth
of the semiconductor substrate, hydrogen gas is introduced into a chamber where
an inner pressure is reduced and a predetermined magnetic field is formed, plasma
is generated by introducing a microwave into the magnetic field, hydrogen ion beams
containing hydrogen molecule ions is extracted from the plasma, and the hydrogen
molecule ions are irradiated and implanted onto the semiconductor substrate. Thus,
a throughput in the hydrogen ion implantation is improved, thus making it possible
to enhance the manufacturing efficiency of the SOI wafer.
