Method of manufacturing a semiconductor device

   
   

A method of producing a thin, non-lead type semiconductor device superior in packaging performance is to be provided. A recess and grooves are formed on a main surface of a conductive substrate in accordance with predetermined patterns to define plural compartments surrounded with the recess and grooves, and plural product-forming portions are formed each by one or plural recesses and plural compartments. Thereafter, a back surface of a semiconductor element is fixed onto a depressed bottom of each of the product-forming portions through an adhesive, then electrodes formed on the semiconductor element and the compartments are connected with each other through conductive wires, an insulating resin is formed on the main surface of the substrate so as to cover the semiconductor element and the wires, then a back surface of the substrate is removed a predetermined thickness, thereby allowing the compartments to be electrically isolated each independently and allowing the adhesive to be exposed, a plating film is formed on surfaces of the compartments exposed to a surface of the resin layer, and the resin layer is cut along boundary portions of the product-forming portions to fabricate plural, thin, non-lead type semiconductor devices in each of which the back surface of the semiconductor element is lower than the main surfaces of the compartments.

 
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