A non-volatile semiconductor memory device comprises a plurality of blocks each
having a plurality of memory cells to be erased at a time and a decoder for selecting
the memory cells, each of the blocks having a block decoder for latching a selection
signal thereof in pre-programming and for selecting all of the latched blocks by
the selection signal at the same time, a sense amplifier, and an address control
circuit for controlling a sequence, the sequence including counting addresses of
the memory cells in erasing and erasing all of the selected memory cells after
pre-programming, all of the blocks having the latched selection signal being controlled
to be collectively erased by the address control circuit.
