Semiconductor devices and methods of fabrication. A device includes
a semiconductor substrate, a gate electrode insulated from the semiconductor substrate
by a gate insulation layer, LDD-type source/drain regions formed at both sides
of the gate electrode, an interlayer insulation layer formed over the gate electrode
and the substrate, and a shared contact piercing the interlayer insulation layer
and contacting the gate electrode and one of the LDD-type source/drain regions
including at least a part of a lightly doped drain region. Multiple-layer spacers
are formed on both sides of the gate structure and used as a mask in forming the
LDD-type regions. At least one layer of the spacer is removed in the contact opening
to widen the opening to receive a contact plug.
