A high-speed accessible ferroelectric memory device includes ferroelectric capacitors
(memory cells) at respective intersecting points of a plurality of word lines and
a plurality of bit lines. A voltage supply line for a selected word line and a
voltage supply line for an unselected word line are connected with a word line
driver section which drives the word lines. A voltage supply line for a selected
bit line and a voltage supply line for an unselected bit line are connected with
a bit line driver section which drives the bit lines. A voltage select circuit
which selects the voltages of the supply lines fixes the potential of one of the
voltage supply line for the unselected word line and the voltage supply line for
the unselected bit line in both cases of applying a positive and negative select
voltages to a selected memory cell (read period and write period).
