A chemical vapor deposition (CVD) method for forming a microelectronic layer
provides
a source material dispensing nozzle employed within a chemical vapor deposition
(CVD) apparatus which is employed within the chemical vapor deposition (CVD) method.
The source material dispensing nozzle is calibrated to provide a calibrated source
material dispensing nozzle. The calibrated source material dispensing nozzle is
employed within the chemical vapor deposition (CVD) apparatus while employing the
chemical vapor deposition (CVD) method for forming a chemical vapor deposition
(CVD) deposited microelectronic layer upon the substrate positioned within the
chemical vapor deposition (CVD) apparatus.
