Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatment

A method of forming a contact in a semiconductor device deposits a refractory metal contact layer in a contact hole on a conductive region portion in a silicon substrate. The refractory metal contact layer is reacted with the silicide region prior to a plasma treatment of a contact barrier metal layer formed within the contact hole. This prevents portions of the refractory metal contact layer from being nitridated prior to conversion to silicide.