An integrated circuit capacitor and an integrated circuit are provided. The integrated circuit capacitor includes at least first, second and third conducting plates. The first conducting plate is positioned between the second and third plates. A first dielectric layer is positioned between the first and third conducting plates. A second dielectric layer is positioned between the first and second conducting plates. An "overlap portion" of the second conducting plate extends beyond the edge of the first conducting plate and towards the third conducting plate. The capacitor is arranged so that the electrical breakdown voltage between the overlap portion and the third conducting plate is lower than the electrical breakdown voltage between the first and second conducting plates.

 
Web www.patentalert.com

< Emitter turn-off thyristors (ETO)

< Field-effect transistor, and integrated circuit device and switching circuit using the same

> Semiconductor component

> Semiconductor device and method of manufacturing the same

~ 00202