The present invention is embodied in high performance p-type thermoelectric materials
having enhanced thermoelectric properties and the methods of preparing such materials.
In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy
wherein 0x4, A is a transition metal, B is a pnicogen, and 0y3
are formed for use in manufacturing thermoelectric devices with substantially enhanced
operating characteristics and improved efficiency. Two methods of preparing p-type
Zn4Sb3 and related alloys of the present invention include
a crystal growth method and a powder metallurgy method.