The present invention relates to a method of bonding a first member (110,
210, 130, 230, 410, 430, 510, 530, 610) to a second silicon member (120,
220, 420a, 420b, 600) through anodic bonding. The
method comprises the steps of selectively depositing on said first member bondable
sections (170a, 170b, 270, 470a, 470b,
470c, 570, 620) before bringing said first and second
members together for anodic bonding.