A novel transistor structure and its method of fabrication. According to the
present
invention, the transistor includes an intrinsic silicon body having a first surface.
A gate dielectric is formed on the first surface of the intrinsic silicon body.
A gate electrode is formed on the gate dielectric wherein the gate electrode comprises
a mid-gap work function film on the gate dielectric. A pair of source/drain regions
are formed on opposite sides of the intrinsic silicon body.