A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).

 
Web www.patentalert.com

< Group-III nitride semiconductor device, production method thereof and light-emitting diode

< Method for manufacturing a light emitting diode having a transparent substrate

> AlGaInN light emitting diode

> Method and apparatus for controlling integrated receiver operation in a communications terminal

~ 00213