A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (AlXGaYIn1-(X+Y)N: 0X1, 0Y1 and 0X+Y1) crystal layer vapor-phase grown on the crystal substrate, an ohmic electrode and an electrically conducting boron phosphide crystal layer provided between the ohmic electrode and the Group-III nitride semiconductor crystal layer, the ohmic electrode being disposed in contact with the boron phosphide crystal layer. Also disclosed is a method for producing the Group-III nitride semiconductor device, and a light-emitting diode including the Group-III nitride semiconductor device.

 
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