A method of manufacturing a semiconductor device, including depositing a first layer of dielectric material onto the device, laser thermal annealing a surface of the first layer, and depositing a second layer of dielectric material over the laser thermal annealed surface of the first layer. The two layers are preferably low dielectric constant ("low-k") material that form an inter-layer dielectric ("ILD") layer of a semiconductor device. According to one aspect of the invention, a third layer of low-k material is deposited over the second layer and a surface of the third layer is also laser thermal annealed.