There is disclosed a semiconductor apparatus comprising a semiconductor substrate having a first region and a second region isolated from the first region, a first semiconductor device which is formed in the first region and which includes a first gate insulating film of a silicon oxide single film formed on the semiconductor substrate, and a first gate electrode formed on the first gate insulating film, and a second semiconductor device which is formed in the second region and which includes a second insulating film of a single layer made of an insulating material of a dielectric constant different from that of the silicon oxide film, and a second gate electrode formed on the second gate insulating film.

 
Web www.patentalert.com

< Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells

< Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor

> Method to fabricate passive components using conductive polymer

> Use of a lenslet array with a vertically stacked pixel array
~ 00216