A buried channel FET including a substrate, a relaxed SiGe layer, a channel layer, a SiGe cap layer, and an ion implanted dopant supply. The ion implanted dopant supply can be in either the SiGe cap layer or the relaxed SiGe layer. In one embodiment the FET is a MOSFET. In another embodiment the FET is within an integrated circuit. In yet another embodiment, the FET is interconnected to a surface channel FET.