An integrated circuit device may include a pair of first and second input/output lines on a substrate and a precharge circuit connected to the first and second input/output lines. More particularly, portions of the first and second input/output lines may extend in a parallel direction along first lengths thereof, portions of the first and second input/output lines may cross one another in a twist region so that portions of the first and second input/output lines in the twist region extend in directions different than the parallel direction, and portions of the first and second input/output lines may extend in the parallel direction along second lengths. Accordingly, relative positions of the first and second input/output lines may be reversed in the first and second lengths thereof. In addition, the precharge circuit may be connected to portions of the first and second input/output lines in the twist region extending in the directions different than the parallel direction, and the precharge circuit may be configured to provide that the first and second input/output lines have a same electrical potential responsive to an enable signal. Related memory devices are also discussed.