In a ferroelectric element, the ferroelectric film is prevented from deteriorating and the interconnect film from lowering in reliability. A ferroelectric element comprises a first electrode, a ferroelectric film formed on the first electrode, a second electrode formed on the ferroelectric film, a first hydrogen blocking film formed directly on a surface of the second electrode, a first insulation film formed on the first hydrogen blocking film, a first opening formed in the first hydrogen blocking film exposing a part of the second electrode, a second opening formed in the first insulation film and having a greater diameter than the diameter of the first opening, and an interconnect film connected to the second electrode through the first and second openings.

 
Web www.patentalert.com

< Power semiconductor device

< Light-emitting semiconductor device and method of fabrication

> Memory cell having improved interconnect

> Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltage

~ 00230