There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

 
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< Magnetic memory device having a non-volatile magnetic section and manufacturing thereof

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> Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

> Deep well implant structure providing latch-up resistant CMOS semiconductor product
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