A semiconductor device includes a substrate and an insulating layer formed on the substrate. A conductive fin may be formed on the insulating layer. Fully silicided source and drain regions may be formed adjacent to the fin. A metal gate may be formed over a portion of the fin via a damascene process.

 
Web www.patentalert.com

< High-density three-dimensional memory

< Apparatus and circuit having reduced leakage current and method therefor

> Total internal reflection (TIR) CMOS imager

> Integrated circuits using optical fiber interconnects formed through a semiconductor wafer
~ 00236