A thin film capacitor with small electrode resistance and great Q-value which comprises a small number of thin films that are deposited successively is disclosed. It is effective for miniaturization and high density packaging of a device and for preventing poor characteristics and degradation of reliability. A plurality of lower electrodes 2 are provided on a supporting substrate 1, which are spaced apart from each other in a high frequency signal propagation direction P. Two upper electrodes 5 spaced apart from each other in the high frequency signal propagation direction P are provided on one of the plurality of the lower electrodes 2 through a thin film dielectric layer 4, by which two capacitance elements are formed. The upper electrodes 5 are connected together by an extraction electrode 8 so that the two capacitance elements are connected in series. A maximum distance L1 between the two upper electrodes 5 in the high frequency signal propagation direction P is smaller than a minimum length W1 of the upper electrodes 5 in the direction perpendicular to the high frequency signal propagation direction P in plan view.