As to a magnetic tunnel junction magneto-resistive head, which comprises an antiferromagnetic layer, a pinned ferromagnetic layer adjacent to said antiferromagnetic layer and magnetically pinned by a magnetization of said antiferromagnetic layer, a free ferromagnetic layer which is magnetically free from the magnetization of said antiferromagnetic layer, insulating layers sandwiched by these ferromagnetic layers, a stacked layers of ferromagnetic layers to control the magnetic domain of said free ferromagnetic layer and a pair of electrodes to apply a current to these layers and films, said stacked layers of ferromagnetic layers are formed between said free ferromagnetic layer and one of said electrodes. According to this composition, it is possible to present a magnetic tunnel junction magneto-resistive sensor with preferable domain controlling force against the free ferromagnetic layer.

 
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