An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba_(1-y)(1-x)Sr_(1-y)xY_y)Ti_1+zO₃₊ with the range 0x1, 0.007y0.02, -10.5, and (Ba_(1-y)(1-x)+Sr_(1-y)x)/Ti_1+z1, and an upper electrode. An electronic device comprising the capacitive element of the present invention is also disclosed.