A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.

 
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> Process of forming HA/ZrO2 complex coating on Co—Cr—Mo alloy

> Hyperpolarizable organic chromophores
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