A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta₂O₅) and another film of a dielectric oxide, such as aluminum oxide (Al₂O₃), and silicon oxide (SiO₂). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO₂), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.