An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

 
Web www.patentalert.com

< Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure

< Method and apparatus for providing precise control of magnetic coupling field in NiMn top spin valve heads and amplitude enhancement

> Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance

> Magnetoresistive element and magnetic memory device
~ 00258