Disclosed is a semiconductor device comprising a semiconductor substrate,
a capacitor provided above the semiconductor substrate and including a bottom electrode,
a top electrode, and a dielectric film provided between the bottom electrode and
the top electrode, the bottom electrode comprising a first conductive film containing
iridium, a second conductive film provided between the dielectric film and the
first conductive film and formed of a noble metal film, a third conductive film
provided between the dielectric film and the second conductive film and formed
of a metal oxide film having a perovskite structure, and a diffusion prevention
film provided between the first conductive film and the second conductive film
and including at least one of a metal film and a metal oxide film, the diffusion
prevention film preventing diffusion of iridium contained in the first conductive film.