To provide a piezoelectric thin-film element small in leak current between electrode metal films and its manufacturing method are presented, the piezoelectric thin-film element includes at least one unit laminated body composed of a piezoelectric thin-film having a mutually facing first surface and second surface, a first electrode metal film on the first surface, and a second electrode metal film on the second surface, in which an electrode separation surface composed of a piezoelectric thin-film surface parallel to the first surface is provided between the first electrode metal film and second electrode metal film.

 
Web www.patentalert.com

< Semiconductor device

< Semiconductor device using metal nitride as insulating film

> Method of producing lead zirconate titanate-based thin film, dielectric device and dielectric thin film

> Use of ceramics in dental and orthodontic applications

~ 00261