A process for controlling the plasma etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by (1) maintaining various portions of the etch chamber at elevated temperatures, and/ox (2) using an etch chemistry having a fluorohydrocarbon gas containing at least as many hydrogen atoms as fluorine atoms, preferably CH2F2 or CH3F.

 
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