In an aspect of the present invention, a magnetic random access memory includes a substrate, a MTJ (Magnetic tunnel Junction) device formed above the substrate, a first wiring line formed above the substrate, and a second wiring line formed above the substrate. The MTJ device includes a pinned ferromagnetic layer which has a pinned magnetization, a free ferromagnetic lamination layer, and a tunnel barrier layer interposed between the pinned ferromagnetic layer and the free ferromagnetic lamination layer. The free ferromagnetic lamination layer includes a first ferromagnetic layer coupled to the tunnel barrier layer and having a reversible first magnetization, a second ferromagnetic layer which has and a second magnetization whose direction is opposite to a direction of the first magnetization, the second magnetization being reversible, and a non-magnetic conductive layer provided between the first ferromagnetic layer and the second ferromagnetic layer and having a sheet resistance lower than sheet resistances of the first ferromagnetic layer and the second ferromagnetic layer. A write current is supplied the free ferromagnetic lamination layer through one of the first wiring line and the second wiring line to reverse the first magnetization and the second magnetization, and the other of the first wiring line and the second wiring line receives the supplied write current from the free ferromagnetic lamination layer.