A resist composition for liquid immersion lithography process, which
comprises: (A) a polymer comprising (a1) alkali-soluble constitutional
units each comprising an alicyclic group having both (i) a fluorine atom
or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the
polymer changes in alkali-solubility due to the action of acid; and (B)
an acid generator which generates acid due to exposure to light, and a
method for forming a resist pattern using the resist composition. By the
resist composition or the method, an adverse effect of the immersion
liquid can be avoided while achieving high resolution and high depth of
focus.