By having substantially narrow pitches between wires in a first wiring
layer located in an interlayer insulating layer of a semiconductor
integrated circuit device, a total amount of the first wiring layer in
the interlayer insulating film may be increased, thereby reducing a total
amount of the interlayer insulating film having low hardness, which
causes warping. As a result, stresses that are typically applied on a
protective film of the semiconductor integrated circuit device due to the
warping may be prevented. This may prevent the occurrence of a crack,
etc. in the protective film. Therefore, it may be possible to prevent
failures such as electrical disconnection of a second wiring layer above
the protective film due to the crack in the protective film.