The invention relates to a multicrystalline laser-crystallized silicon thin layer solar cell deposited on a glass substrate (a), which is configured for illuminating from the substrate side, and to a production method for the cell. Said solar cell comprises a laser-crystallized multicrystalline silicon layer (b1, b2), whose lower layer region (b1), which is situated on the substrate (a) and provided as a nucleation layer and, at the same time, as a lower transparent electrode, is p-doped (alternatively, n-doped). The silicon layer's second layer region (b2), which faces away from the substrate is p-doped (alternatively, n-doped) less than the nucleation layer and serves as an absorber layer. The edge lengths of the crystallites in the multicrystalline layer (b1, b2) are longer than the layer is thick. The inventive solar cell also comprises a laser-crystallized, n-doped (alternatively, p-doped) silicon layer (c), which is located on the silicon layer (b1, b2) and which serves as an emitter layer, and comprises a back-reflecting contact layer (A1) that serves as an upper electrode on the emitter layer (c).