A method used to form a semiconductor device comprises forming a layer
such as a container capacitor layer having a bottom plate layer. The
bottom plate layer is formed to define a receptacle, and a rim which
defines an opening to an interior of the receptacle. The bottom plate
layer is formed to have a smooth texture. Subsequently, an inhibitor
layer is formed on the rim of the bottom plate layer while a majority of
the receptacle defined by the bottom plate layer remains free from the
inhibitor. With the inhibitor layer on the rim of the bottom plate layer,
at least a portion of the receptacle is converted to have a rough
texture, such as to hemispherical silicon grain (HSG) polysilicon, while
subsequent to the conversion the smooth texture of the rim which defines
the opening to the interior of the receptacle remains. A resulting
structure is also described.