A silicon oxide film is deposited on a substrate disposed in a substrate
processing chamber. The substrate has a gap formed between adjacent
raised surfaces. A liquid Si--C--O--H precursor is vaporized. A flow of
the vaporized liquid Si--C--O--H precursor is provided to the substrate
processing chamber. A gaseous oxidizer is also flowed to the substrate
processing chamber. A deposition plasma is generated inductively from the
precursor and the oxidizer in the substrate processing chamber, and the
silicon oxide film is deposited over the substrate and within the gap
with the deposition plasma.