A memory is described which has memory cells that store data using hot
electron injection. The data is erased through electron tunneling. The
memory cells are described as floating gate transistors wherein the
floating gate is fabricated using a conductive layer of nanocrystalline
silicon particles. Each nanocrystalline silicon particle has a diameter
of about 10 .ANG. to 100 .ANG.. The nanocrystalline silicon particles are
in contact such that a charge stored on the floating gate is shared
between the particles. The floating gate has a reduced electron affinity
to allow for data erase operations using lower voltages.