A method of manufacturing a semiconductor device is provided including: forming a groove in an insulation film; forming a lower electrode material film on the insulation film and in the groove; forming a ferroelectric material film on the lower electrode material film, on the insulation film and in the groove; forming an upper electrode material film on the ferroelectric material film, on the insulation film and in the groove; forming a capacitive element within the groove by removing the upper electrode material film and the ferroelectric material film from the insulation film and leaving the upper electrode material film and the ferroelectric material film within the groove by CMP-polishing the insulation film and the groove.