The present invention provides a semiconductor device using a support of new form which can further expand the range of design and enlarge a circuit size while restraining volume of a substrate than a flexible flat-plate substrate. A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a fibrous support; forming a semiconductor film so as to be in contact with the insulating film; and forming a semiconductor device using the semiconductor film; wherein the step of forming the insulating film or the step of forming the semiconductor film is performed with the support rotating, using a rotational axis parallel to a longitudinal direction of the support as a center.