A magnetic memory device includes magnetoresistance-effect storage elements arranged so as to store information by using a change in a magnetization direction of a storage area of each of the storage elements, and a control unit. The control unit controls a polarity of a first wiring current for generating a recording auxiliary magnetic field in a direction of a hard magnetization axis of the storage area, and a polarity of a second wiring current for generating a recording magnetic field in a direction of an easy magnetization axis of the storage area. Each of the first and second wiring currents has a first polarity when generating a "1" and a second polarity, different from the first polarity, when generating a "0".