A ferroelectric capacitor including a bottom electrode which has a
projecting portion, a top electrode, a ferroelectric layer and a
dielectric layer formed between the bottom electrode and the top
electrode. The dielectric layer is formed on a peripheral area of the
bottom electrode. The ferroelectric layer is formed on the dielectric
layer and on the projecting portion of the bottom electrode. As a result,
a damaged layer which is formed during an etching process occurs at the
ineffective area of the ferroelectric capacitor.