A dielectric material prepared from a siloxy/metal oxide hybrid
composition, and electronic devices such as thin film transistors
comprising such dielectric material are provided herein. The siloxy/metal
oxide hybrid composition comprises a siloxy component such as, for
example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid
composition is useful for the preparation of dielectric layers for thin
film transistors using solution deposition techniques.