One aspect of the present invention is forming a gate electrode over a semiconductor layer; doping the semiconductor layer with an impurity through the gate electrode in the first doping and without passing through the gate electrode in the second doping. Since two kinds of n.sup.31 -type impurity regions are formed in the semiconductor layer, an off current can be reduced, and deterioration of characteristics can be suppressed.

 
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> Functional film for transfer having functional layer, object furnished with functional layer and process for producing the same

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