A method of modifying a semiconductor device to provide electrical parameter monitoring. The device includes a semiconductor die and a package substrate. The substrate includes a conductive plane. The die is connected to the plane via a plurality of connection structures. The method includes disconnecting a first one of the connection structures from the plane, and connecting the first connection structure to an external package connection, thereby providing a capability to monitor an electrical parameter of the die via the external package connection.

 
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> Dielectric reflector for amorphous silicon crystallization

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