An apparatus for measuring alignment of polysilicon shapes to a silicon area. Each polysilicon shape in a first plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. Each polysilicon shape in a second plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. The second plurality of silicon shapes is positioned on the opposite side of the silicon area from the first plurality of silicon shapes. An electrical measurement of how many of the polysilicon shapes in the first plurality of polysilicon shapes and in the second plurality of polysilicon shapes provides a measurement of alignment of the polysilicon shapes and the silicon area.

 
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> Modifying a semiconductor device to provide electrical parameter monitoring

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